Semiconduction electrode construction



p 1952 H. B. LAW 2,609,429

SEMI CONDUCTION ELECTRODE CONSTRUCTION Filed buy 29, 1950 INVENTOR ATTO RN EYE Patented Sept. 2, 1952 SEMICONDUCTION' ELECTRODE CONSTRUCTION Harold B, Law-,Princeton, N. J assignor to Radio Corporation of America, a corporation of'Delaware Application July 29, 1950; Serial No; 176,721

This invention relates "generally to semi-con-' ductor devices, and particularly relates to'the construction and relation of 'the'rectifying electrodesof asemi-conductor circuit element.

A semi-conductor device'or circuit element comprises a semi-conducting. body such, for

example, as 'a' silicon or germanium crystal and a base electrode; an emitter electrode and a collectorelectrode in contact-with the crystal;

The base electrode is in low-resistance contact withthe crystal and may, for-example, consist of a suitable'metal such; for example, as brass which may be soldered tothe-crystal to provide a .large=area" contact therewith. However, itis not essential that the base'electrodebe in'largeareaicontactwith the crystal aslong'as it is in'low resistance contact with the crystal so that its potential determines the potential of the crystal. The emitter and collector electrodes are in'rectifying contact with the crystal. Usually the emitter and collector consists of fine' positive andthe collector negative withre-' spect to thebase. If the crystal should be of the P typeythe potentials must be reversed.

In a-conventional transistor the distance between-the emitter and collector electrodes is of the order of two-mils and this distanceis critical because it'determines' the gain aswell as other electrical characteristics of the device. In some cases, it isalsdnecessary to provide more thantwo rectifying electrodes. Thus, the patentto Rack; 2,476,323,- granted on July 19, 1949 discloses -a-transistor modulator which may have two-or more emitter electrodes, that is, three. or more rectifying electrodes. For such a modulator the various rectifying electrodes should be equally spaced from" each other which presents considerable practical difiiculties, particularly in view of the fact that the distance between two of the electrodes is very small.

It is accordingly an object of the presentin- When it is used 12'Claims. (Cl. 175366) v vention to provide a semi-conductor circuit element wherein the position of the rectifying'electrodes with respect to the semi-conducting crystal and their. distance from each may accurately be defined or predetermined A further object of the invention is to provide a semi-conductor device adapted for use in an amplifier, oscillatoror modulator circuit where two or more rectifying electrodes-may be positioned accurately at predetermined'small distances from each other.

A semi-conductor device in accordance with the present invention isprovide'd with a semi-con ducting body having at least two surfaces which intersect each other vatan angle. The semiconducting body orcrystal is disposed in a suitable. opening or aperture extendingthrough an insulating member The rectifying electrodes preferably consist of fine wires having, a chisel orblunt knife edge point. These wires areforced against the wall of'the aperture in the insulating member and'against the inclined surfaces of the crystal. In this manner the distance be tween the contact points of the rectifying electrodes with the crystal. is determined by the dimensions of the aperture in the insulating member, bythe diameter of the wires-and by the angle between the inclined surfaces of the crystal.

The aperture intheinsulating member may have a circular cross-section' or asquare crosssection. In the latter case, the wires preferably extend along vthe corners of the aperture. It is also feasible to provide an aperture of triangular or generally of polygonal cross-section in which 'case'three or more rectifying electrodes maybe positioned with respect to the crystal.

The novel features that are considered'characteristic of "this invention are set'forth with particularityin the appended claims; The'in vention itself, however, both as to its organization and method of operation, as well as additional objects and advantages thereof, will best beunderstood from the following description when read in'connection' with the accompanying drawing, inwhich:v V y w Figure 1 is an elevational ,view, partly insec tion, of a. semi-conductor device orcircuit element embodying the present invention;

Figure2 is a sectional view; onenlarged scale, taken on line 2-2 "of Figure 1 and illustrating particularly the inclined surfaces of the semiconductor crystal; and

Figures 3 to Sam further fragmentary plan views, partly in. section and similar to Figure 2, of modifications of the'semi-conductor device of the invention.

Referring now to the drawing, in which like components have been designated by the same reference numerals throughout the figures, and particularly to Figures 1 and 2, there is illustrated a semi-conductor device or circuit element in accordance with the invention which comprises a semi-conducting body or crystal l0. Crystal 50 has a lower surface it and two upper surfaces 12 and 13 which intersect each other at an angle. As clearly shown in Figure 2, crystal l9 has a substantially circular crosssection. Crystal h": is mounted on or supported by wire it which may, for example, have a diameter of mils equal to that of crystal l0. Supporting wire l4 may, for example, consist of brass or another good conductor of electricity and may be soldered to the lower surface H of crystal H3 thereby to provide a low-resistance 1 wires ll, I8.

The rectifying electrodes 28 and 2! consist of fine wires of tungsten or Phosphor bronze, for example, and are soldered or otherwise secured to the upper ends of supporting wires ll and :8 as shown. The free ends of wires or electrodes and 2| are provided with a chisel point or a blunt knife edge as shown at 22. Wires 20 and 21 may, for example, have a diameter of approximately 4 mils.

The device illustrated in Figures 1 and 2 may be assembled as follows: At first, electrodes 20 and 2| are secured to supporting Wires El and i8 and their free ends are bent so that the wires 29, 21 extend into aperture l6 along its wall on opposite sides thereof. Thereafter, crystal I0 is secured to its support 14 and pushed upwards against electrodes 20' and 2t. Eventually, the chisel points 22 of electrodes 20 and 2| are wedged between the inclined surfaces l2, $3 of crystal l8 and the wall of aperture [6. Crystal ii) and its supporting wire it may be held in place by means of a metallicinsert 23 which is providedin and secured to insulating block [5. As shown at 24, supporting wire l4 may be soldered to insert 23 tomaintain the crystal in its desired position. Thus, it will readily be seen that the diameter of aperture 1 2, the diameter of electrodes 28, 21 and the angle which inclined surfaces [2, l3 form with the aperture define the distance between the contact points of electrodes 20, 2| with surfaces l2 and I3.

In the device of Figures 1 and 2 supporting wire I l forms the base electrode and wires 2B, 2! constitute the emitter and collector electrodes. It will be understood that the particular position of base electrode M is immaterial as long as it is in low-resistance contact with crystal l0 and therefore controls the potential'of the bulk of crystal ID. A preferred embodiment of the present invention is shown in Figure 8. Crystal it] is of square cross-section as clearly shown and extend along the other corners of aperture I6. It will accordingly be readily seen that the position of the electrodes 23 and 2! is defined even better because they extend along the corners of aperture !5 in insulating block l5.

Another modification of the. semi-conductor device of the invention is illustrated in Figure 4. This modification permits to position three rectifying electrodes in such a manner that their distances from each other are equal. To this end crystal iii is of triangular cross-section as clearly shown. It is provided with three sloping surfaces 39, 3| and 32 which intersect each other along three lines 33, 34 and 35 which are disposed at right angles to the three sides of the triangle which forms the outline of crystal it The three electrodes are shown at B'e, 31 and 38 and extend along the three corners of the triangular aperture it. Two of the electrodes 36, 3'! and 38 may, for example, be used as emitter electrodes to provide a modulator as disclosed in theRack patent previously referred to.

As shown in Figure 5, crystal Ill may have a square cross-section and four intersecting sloping surfaces 46, 4!, E2 and =33. The four surfaces 40 to 43 intersect each other along two lines 44 and 45 arranged at right angles to each other and to the four lines which form the outline of crystal 18. Four electrodes 45, 47, 48 and 49 are arranged along the four corners of aperture 16.

As illustrated in Figure 6, it is also feasible to provide a crystal ii] of hexagonal cross-section or generally of polygonal cross-section. The crystal is now provided with six sloping surfaces indicated at 5% The six sloping surfaces again inter sect each other along six lines shown at 5! which are at right angles to the six lines'forming the outline of the crystal. Six electrodes indicated at 52 may be provided at the six corners of aperture I5. Q

It will be understood that the different sloping surfaces of crystal i8 illustrated in Figures 2 to 6 may readily be obtained b grinding a crystal to the desired shape. If crystal Ill has a square, triangular or hexagonal shape, supporting wire M may have the same cross-section as the crystal. Alternatively, supporting wire l4 may have a circular crosssection and the aperture it may have a shape and width so that wire i l may readily be moved through the aperture. In the modifications shown in Figures 3 to 6 the rectifyingelectrodes are accurately positioned by the corners of aperture It.

There has thus been disclosed an improved construction for the rectifying electrodes of a semi-conductor device or circuit element. .Two, three or more rectifying electrodes may bev ro. vided and their distances may be predetermined and may be made equal. The contacts between the rectifying electrodes and the crystal are substantially point contacts due to the fact thatthe electrodes are provided with blunt knife edges or chisel points. It will be appreciated that the electrode arrangement and construction described, permits any desired number of contacts to be made with a body of semi-conducting material without resorting to complicated electrode holding means or any enlargement of the body.

What is claimed is:

l. A semi-conductor device comprising a semiconducting body havin at least two surfaces intersecting each other at an angle and a further surface, a metallic support in low-resistance contact with the further surface of said body, an insulating member havin an aperture forming aninner surface and adapte to receive said bod-y aild said suppo-rt'z.a pai gate'd elctrodes" eaten ag said ai'lertilre, seer-1' of safd eleetredes'i having' aom and means' for-press'ing each -of said the point individually against one of said two intersecting surfaces of saidibody and with" said electrodesextendingyeach aion aaw against a predetermined portiom of the' mneesurface of said' member to-define the distance-between their contact areaswith said body.

2;" Asemi-conductor devi'cecomprisingasemi conduct-ingbodyhaving' atleast two surfaces interseeti'ng-eacnother at'an -ang-l'e and a further surface; a metallic supportin low-resistance contact" with the Q further surface of ='said -body, aninsulating'f memberhavingf arrelongatedaperture formin -i'arrfinner-surfaceand extendingtherethrouglr and adapted-- toreceive saidleast two further surfaces intersectingeach other at an angle; a metallici-suppprt:in loweresistance contact ,with the first surface, .of said body, an. insulating member havin jgan elongated. opening extending therethrough' and "adapted to; receive said'supp'ort and saidbody; said furth'ersuri faces sloping inwardly of said opening and toward the wall thereof, a pair of electrodes, each consisting of a conductive wire extending into said aperture and having a point, and means for pressing said electrodes against said further surfaces and with said electrodes positioned along and against the wall of the aperture in said member to define the distance between the contact areas of said electrodes with said further surfaces.

4. A semi-conductor device comprising a semiconducting body havin a lower surface and at least two upper surfaces intersecting each other at an angle, a metallic support in low-resistance contact with the lower surface of said body, an insulating member having an elongated opening extending therethrough and adapted to receive said support and said body, said two intersecting surfaces sloping inwardly of said opening and toward the wall thereof, a pair of electrodes, each consisting of a metallic wire having a chisel point, and means for pressing said electrodes against said upper surfaces and with said electrodes extending alon and against the wall of the aperture in said member to define the distance between the contact points of said electrodes with said upper surfaces.

5. A device as claimed in claim 3 wherein said opening, said body and said support are of substantially circular cross-section.

6. A semi-conducting device comprising a semi-conducting body having a substantially square cross-section with a lower surface and at least two upper surfaces intersecting each other at an angle, a metallic support in low-resistance contact with said lower surface, an insulating member having: an; elongated.. opening themethroughfiof 'substantiallysquare cross-section and of a size to receive said body and said' support,

saidupper?- surfaces: sloping. inwardly? on said electrodes; each consisting of a metallic wire having point; andi'imeansc'for guiding said electrodes alongpredetermined corners of' 'said'openingand forpressing them' toward said inclined surfaces; 1 whereby said: electrodes :arewedged l between said; upper surfaces and 1 said corners to determines the distance-"between their Contact points wi th: L' aid" 'upper surfaces.

7? A-- seinf-conducting' device comprising a semi-conducting body having a substantially square cross-section I with a lower surface andtwomp ersurraoes intersecting each other at ananglaal'ong a line connecting twocorners-of said square-,'-' a metallic support inflow-resistance contact with saidlower surface, aninsulating member-'1'" having; an 3 elongated opening therethroughof substantiallysquare cross-section and iof a size to receive said body and-said sup' port, said 'uppersurfaces sloping inwa'rdly of said opening and toward the wall thereof, a pairot" electrodes, each -consisting= of" a fine metallic-wire having a knife edge p'oint; and meansfor guiding said electrodes along" the corners "ofsaid aperture opposite said-line and for' pressing them toward" said inclined surfaceswith points facing said lines; whereby said electrodes are wedged-between said upper surfaces' a-nd -opposi'te -said"--line to definethe distanc' betweem their rectifying contact points" 2 with said uppensurf'aces:

8 5 -A' semi-conductingdevice comprising asemi conducting body having asubstantiallysquarecross-sectionwithaglower-surface andfourupper.

surfaces'dntersectingeach other at an angle-along two lines at right angles to the sides of said square, a metallic support in low-resistance contact with said lower surface, an insulating member having an elongated opening therethrough of substantially square cross-section and of a size to receive said body and said support, said upper surfaces sloping inwardly of said opening and toward the wall thereof, four electrodes, each consisting of a fine metallic wire having a chisel point, and means for guiding each of said electrodes along a corner of said aperture and for pressing said electrodes toward said inclined surfaces-with said chisel points facing the intersection of said lines, whereby said electrodes are wedged between said upper surfaces and said corners to determine the distance between their substantially point-like rectifying contacts with said upper surfaces.

9. A semi-conductor device comprising a semiconducting body of substantially triangular crosssection having a lower surface and three upper surfaces intersecting each other along three lines substantially perpendicular to the sides of the triangle forming the outline of said body, a metallic support soldered to the lower surface of said body, an insulating member having an elongated aperture therein, said upper surfaces sloping inwardly of said aperture and toward the wall thereof, said aperture having a portion with a triangular cross-section to receive said body and another portion to receive said support, three fine wires each having a chisel point, and means for positioning each of said wires along one of the corners of the triangular portion of said aperture and for pressing it against one of the upper surfaces of said body, thereby to define the distances between the substantially point-like rectifying contacts between said wires and the upper surfaces of said body. e

10. A semi-conductor device comprising a semiconducting body of polygonal cross-section having a lower surface and a plurality of upper surfaces intersecting each other along lines substantially perpendicular to the sides of the poly gon forming the outline of said body, a metallic support soldered to the lower surface of said body, an insulating member having an elongated aperture therein, said upper surfaces sloping inwardly of said aperture and toward the wall thereof, said aperture having a portion with apolygonal crosssection to receive said body and another portion to receive said support, a number of fine wires not exceeding the number of said upper surfaces, each of said wires having a chisel point, i and means for positioning each of said wires along a corner of the polygonal portion of said aperture and for pressing it against one of the upper surfaces of said body, thereby to define the distances between the substantially point-like rectifying contacts between said wires and the upper sur-v faces of said body.

11. A semi-conductor device comprising a semiconducting body of substantially hexagonal crosssection having a lower surface and six upper surfaces intersecting each other along three lines substantially perpendicular to the sides of the hexagon forming the outline of said body, a metallic support soldered to the lower surface of said body, an insulating member having an elongated aperture therein, said upper surfaces sloping inwardly of said aperture and toward the wall thereof, said aperture having a portion with a hexagonal cross-section to receive said body and another portion to receive said support, a number of fine wires not exceeding six, each wire having a chisel point, and means for positioning each of said wires along a corner, of the hexagonal portion of said aperture and for pressing it againstone of the upper surfaces of said body, thereby to define the distances between the substantially point-like rectifying contacts between said wires and the upper surfaces of said body.

12. A semi-conducting device comprising a semi-conducting body having a cross section forming at least three substantially straight intersecting lines to provide at least three corners, said body having a lower surface and a plurality of upper'surfaces intersecting each other, each of said upper intersecting surfaces sloping towards oneof said corners, a metallic support in low-resistance contact with said lower surface, an insulating member having an elongated opening therethrough, said opening having a cross section ofsubstantially the same shape as that of said body and of a size to receive said body and support, a pair of electrodes, each consisting of a metallic filament having a point, and means for guiding said electrodes along predetermined corners of said opening and for pressing them toward said upper intersecting surfaces, whereby said electrodes are wedged between said upper intersecting surfaces and the corners of said opening to determine the distance between their contact points with said body.

' HAROLD B. LAW.

REFERENCES GITED The following references are of record in the file of this patent: I

2,595,475 McLaughlin June 6, 1952 

